Simulation of Silicon on Insulator Tunnel FET (SOI TFET) Dosimeter

Feasibility of Smart Cards in Silicon-On-Insulator (SOI) Technology

Applications involving smart cards have rapidly emerged since a few years. Up to now, chips are realized in conventional bulk technology. But as the need for performance rises, alternative technologies must be investigated. In this paper we study the feasibility of realizing the blocks for a smart card chip in Silicon-On-Insulator (SOI) technology. For most of the circuit blocks, SOI realizatio...

Impact of Process Variations on the Vertical Silicon Nanowire Tunneling FET (TFET)

This paper presents device simulations on the vertical silicon nanowire tunneling FET (VSiNW TFET). Simulations show that a narrow nanowire and thin gate oxide is required for good performance, which is expected even for conventional MOSFETs. The gate length also needs to be more than the nanowire diameter to prevent short channel effects. An effect more unique to TFET is the need for abrupt so...

An extensive electrostatic analysis of dual material gate all around tunnel FET (DMGAA-TFET)

In the proposed work an analytical model of a p-channel dual material gate all around tunnel FET (DMGAA-TFET) is presented and its performance is compared with the conventional GAA-TFET. The electrostatic potential profile of the model is obtained using 2-D Laplace’s solution in the cylindrical coordinate system. A quantitative study of the drain current has been carried out using electric fiel...

Ultrathin tunnel insulator films on silicon for electrochemiluminescence studies

Improved drain current characteristics of tunnel field effect transistor with heterodielectric stacked structure

In this paper, we proposed a 2-D analytical model for electrical characteristics such as surface potential, electric field and drain current of Silicon-on-Insulator Tunnel Field Effect Transistor (SOI TFETs) with a SiO2/High-k stacked gate-oxide structure. By using superposition principle with suitable boundary conditions, the Poisson’s equation has been solved to model the channel r...